IPD30N10S3L34ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 40.28 грн |
| 5000+ | 36.16 грн |
| 7500+ | 34.83 грн |
| 12500+ | 31.50 грн |
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Технічний опис IPD30N10S3L34ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 29µA, Supplier Device Package: PG-TO252-3-11, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPD30N10S3L34ATMA1 за ціною від 35.88 грн до 142.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPD30N10S3L34ATMA1 | Infineon Technologies |
MOSFETs N-Ch 100V 30A DPAK-2 OptiMOS-T |
на замовлення 2788 шт: термін постачання 21-30 дні (днів) |
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IPD30N10S3L34ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 29µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 23958 шт: термін постачання 21-31 дні (днів) |
|
| IPD30N10S3L34ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 100V 30A DPAK-2 OptiMOS-T
MOSFETs N-Ch 100V 30A DPAK-2 OptiMOS-T
на замовлення 2788 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 131.57 грн |
| 10+ | 85.92 грн |
| 100+ | 53.21 грн |
| 500+ | 42.29 грн |
| 1000+ | 38.84 грн |
| 2500+ | 35.88 грн |
| IPD30N10S3L34ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
на замовлення 23958 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 142.73 грн |
| 10+ | 87.58 грн |
| 100+ | 59.15 грн |
| 500+ | 44.06 грн |
| 1000+ | 40.38 грн |