IPD30N12S3L31ATMA1 Infineon Technologies

Description: MOSFET N-CHANNEL_100+, Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2.4V @ 29µA, Power Dissipation (Max): 57W, Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel.