IPD35N12S3L24ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис IPD35N12S3L24ATMA1 Infineon Technologies
Description: MOSFET N-CH 120V 35A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 39µA, Supplier Device Package: PG-TO252-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPD35N12S3L24ATMA1 за ціною від 43.77 грн до 172.68 грн
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IPD35N12S3L24ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 35A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 39µA Supplier Device Package: PG-TO252-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 8588 шт: термін постачання 21-31 дні (днів) |
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IPD35N12S3L24ATMA1 | Infineon Technologies |
MOSFETs N-CHANNEL 100+ |
на замовлення 23471 шт: термін постачання 21-30 дні (днів) |
|
| IPD35N12S3L24ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 120V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8588 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 168.10 грн |
| 10+ | 103.77 грн |
| 100+ | 70.57 грн |
| 500+ | 52.90 грн |
| 1000+ | 48.62 грн |
| IPD35N12S3L24ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N-CHANNEL 100+
MOSFETs N-CHANNEL 100+
на замовлення 23471 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 172.68 грн |
| 10+ | 109.42 грн |
| 100+ | 64.84 грн |
| 500+ | 51.45 грн |
| 1000+ | 47.36 грн |
| 2500+ | 43.77 грн |