IPD50P03P4L11ATMA1 INFINEON
Виробник: INFINEONDescription: INFINEON - IPD50P03P4L11ATMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 58W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0083ohm
SVHC: No SVHC (17-Jan-2023)
на замовлення 10688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 52.44 грн |
| 500+ | 35.01 грн |
| 1000+ | 26.32 грн |
| 5000+ | 23.57 грн |
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Технічний опис IPD50P03P4L11ATMA1 INFINEON
Description: MOSFET P-CH 30V 50A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 2V @ 85µA, Supplier Device Package: PG-TO252-3-11, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPD50P03P4L11ATMA1 за ціною від 23.57 грн до 81.75 грн
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IPD50P03P4L11ATMA1 | Виробник : INFINEON |
Description: INFINEON - IPD50P03P4L11ATMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 58W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0083ohm SVHC: No SVHC (17-Jan-2023) |
на замовлення 10688 шт: термін постачання 21-31 дні (днів) |
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IPD50P03P4L11ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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IPD50P03P4L11ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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| IPD50P03P4L11ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W Mounting: SMD Drain-source voltage: -30V Drain current: -42A On-state resistance: 10.5mΩ Type of transistor: P-MOSFET Power dissipation: 58W Polarisation: unipolar Case: PG-TO252-3-11 Technology: OptiMOS® -P2 Kind of channel: enhancement Gate-source voltage: -5...16V Pulsed drain current: -200A кількість в упаковці: 2500 шт |
товару немає в наявності |
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IPD50P03P4L11ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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IPD50P03P4L11ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 50A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| IPD50P03P4L11ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W Mounting: SMD Drain-source voltage: -30V Drain current: -42A On-state resistance: 10.5mΩ Type of transistor: P-MOSFET Power dissipation: 58W Polarisation: unipolar Case: PG-TO252-3-11 Technology: OptiMOS® -P2 Kind of channel: enhancement Gate-source voltage: -5...16V Pulsed drain current: -200A |
товару немає в наявності |