IPD50R500CEAUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 22.72 грн |
| 5000+ | 20.23 грн |
| 7500+ | 19.39 грн |
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Технічний опис IPD50R500CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252, Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 200µA, Power Dissipation (Max): 57W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD50R500CEAUMA1 за ціною від 23.75 грн до 88.81 грн
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IPD50R500CEAUMA1 | Infineon Technologies |
MOSFETs CONSUMER |
на замовлення 3836 шт: термін постачання 21-30 дні (днів) |
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IPD50R500CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 7.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V |
на замовлення 10072 шт: термін постачання 21-31 дні (днів) |
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| IPD50R500CEAUMA1 |
|
Виробник: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
на замовлення 3836 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.01 грн |
| 10+ | 41.18 грн |
| 25+ | 35.59 грн |
| 100+ | 28.83 грн |
| 250+ | 28.62 грн |
| 500+ | 25.44 грн |
| 1000+ | 25.30 грн |
| IPD50R500CEAUMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 10072 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 54.06 грн |
| 100+ | 35.73 грн |
| 500+ | 26.13 грн |
| 1000+ | 23.75 грн |