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Технічний опис IPD60R170CFD7 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3, Type of transistor: N-MOSFET, On-state resistance: 0.325Ω, Mounting: SMD, Power dissipation: 76W, Gate charge: 28nC, Polarisation: unipolar, Technology: OptiMOS™, Drain current: 9A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±20V, Case: PG-TO252-3.
Інші пропозиції IPD60R170CFD7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPD60R170CFD7 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3 Type of transistor: N-MOSFET On-state resistance: 0.325Ω Mounting: SMD Power dissipation: 76W Gate charge: 28nC Polarisation: unipolar Technology: OptiMOS™ Drain current: 9A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Case: PG-TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPD60R170CFD7 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.325Ω
Mounting: SMD
Power dissipation: 76W
Gate charge: 28nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.325Ω
Mounting: SMD
Power dissipation: 76W
Gate charge: 28nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
товару немає в наявності
В кошику
од. на суму грн.