IPD60R1K4C6 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IPD60R1K4C6 Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 90µA, Power Dissipation (Max): 28.4W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD60R1K4C6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPD60R1K4C6 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO252-3 Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPD60R1K4C6 | Infineon Technologies |
MOSFET N-Ch 650V 3.2A DPAK-2 CoolMOS C6 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPD60R1K4C6 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 3.2A TO252-3
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товару немає в наявності
В кошику
од. на суму грн.
| IPD60R1K4C6 |
|
Виробник: Infineon Technologies
MOSFET N-Ch 650V 3.2A DPAK-2 CoolMOS C6
MOSFET N-Ch 650V 3.2A DPAK-2 CoolMOS C6
товару немає в наявності
В кошику
од. на суму грн.