| Кількість | Ціна |
|---|---|
| 5+ | 73.45 грн |
| 10+ | 45.09 грн |
| 100+ | 26.16 грн |
| 500+ | 20.30 грн |
| 1000+ | 18.36 грн |
| 2500+ | 15.88 грн |
| 5000+ | 13.74 грн |
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Технічний опис IPD60R1K5PFD7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 40µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V.
Інші пропозиції IPD60R1K5PFD7SAUMA1
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD60R1K5PFD7SAUMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 3.6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V |
на замовлення 2422 шт: термін постачання 21-31 дні (днів) |
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| IPD60R1K5PFD7SAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
на замовлення 2422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.22 грн |
| 10+ | 48.24 грн |
| 100+ | 31.63 грн |
| 500+ | 22.98 грн |
| 1000+ | 20.82 грн |