IPD60R800CEATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 5.6A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 170µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).