Продукція > INFINEON TECHNOLOGIES > IPD640N06LGBTMA1

IPD640N06LGBTMA1 Infineon Technologies

Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис IPD640N06LGBTMA1 Infineon Technologies

Description: MOSFET N-CH 60V 18A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2V @ 16µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V.

Інші пропозиції IPD640N06LGBTMA1

Назва	Виробник	Інформація	Доступність	Ціна
IPD640N06LGBTMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W Type of transistor: N-MOSFET Case: PG-TO252-3 Drain-source voltage: 60V Drain current: 12A On-state resistance: 64mΩ Power dissipation: 47W Polarisation: unipolar Technology: OptiMOS® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 72A Mounting: SMD кількість в упаковці: 2500 шт	товару немає в наявності	В кошику од. на суму грн.
IPD640N06LGBTMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 60V 18A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V	товару немає в наявності	В кошику од. на суму грн.
IPD640N06LGBTMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 60V 18A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V	товару немає в наявності	В кошику од. на суму грн.
IPD640N06LGBTMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W Type of transistor: N-MOSFET Case: PG-TO252-3 Drain-source voltage: 60V Drain current: 12A On-state resistance: 64mΩ Power dissipation: 47W Polarisation: unipolar Technology: OptiMOS® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 72A Mounting: SMD	товару немає в наявності	В кошику од. на суму грн.