IPD65R1K0CEAUMA1 Infineon Technologies

Description: MOSFET N-CH 650V 7.2A TO252-3, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 200µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 650 V.