IPD65R250C6XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 16.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Power Dissipation (Max): 208.3W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IPD65R250C6XTMA1 Infineon Technologies
Description: MOSFET N-CH 650V 16.1A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 400µA, Power Dissipation (Max): 208.3W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD65R250C6XTMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPD65R250C6XTMA1 | Infineon Technologies |
MOSFET N-Ch 700V 16.1A DPAK-2 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPD65R250C6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Mounting: SMD Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.1A On-state resistance: 0.25Ω Gate-source voltage: ±20V Power dissipation: 208.3W Technology: CoolMOS™ Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| IPD65R250C6XTMA1 |
|
Виробник: Infineon Technologies
MOSFET N-Ch 700V 16.1A DPAK-2
MOSFET N-Ch 700V 16.1A DPAK-2
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R250C6XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.