IPD65R600E6BTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IPD65R600E6BTMA1 Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 210µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD65R600E6BTMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPD65R600E6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.6Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| IPD65R600E6BTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.