IPD65R660CFDATMA2 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO252-3-313
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.45 грн |
| 10+ | 93.31 грн |
| 50+ | 70.48 грн |
| 100+ | 59.22 грн |
| 500+ | 47.08 грн |
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Технічний опис IPD65R660CFDATMA2 Infineon Technologies
Description: MOSFET N-CH 700V 6A TO252-3-313, Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO252-3-313, Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 63W (Tc).
Інші пропозиції IPD65R660CFDATMA2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPD65R660CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A TO252-3-313 Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 63W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
IPD65R660CFDATMA2 | Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
IPD65R660CFDATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK Power dissipation: 63W Gate charge: 22nC Technology: CoolMOS™ Drain current: 6A Kind of channel: enhancement Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| IPD65R660CFDATMA2 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO252-3-313
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Description: MOSFET N-CH 700V 6A TO252-3-313
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDATMA2 |
|
Виробник: Infineon Technologies
MOSFETs LOW POWER_LEGACY
MOSFETs LOW POWER_LEGACY
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK
Power dissipation: 63W
Gate charge: 22nC
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK
Power dissipation: 63W
Gate charge: 22nC
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.