Технічний опис IPD65R950CFDATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V, Power Dissipation (Max): 36.7W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: PG-TO252-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V.
Інші пропозиції IPD65R950CFDATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPD65R950CFDATMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 3.9A Drain-source voltage: 650V Power dissipation: 36.7W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.95Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
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IPD65R950CFDATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 650V 3.9A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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IPD65R950CFDATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 3.9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 36.7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO252-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V |
товару немає в наявності |
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IPD65R950CFDATMA1 | Виробник : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
товару немає в наявності |
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IPD65R950CFDATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 3.9A Drain-source voltage: 650V Power dissipation: 36.7W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.95Ω Type of transistor: N-MOSFET |
товару немає в наявності |