IPD65R950CFDATMA2 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.35 грн |
| 10+ | 71.62 грн |
| 100+ | 47.98 грн |
| 500+ | 35.49 грн |
| 1000+ | 32.43 грн |
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Технічний опис IPD65R950CFDATMA2 Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 36.7W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції IPD65R950CFDATMA2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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IPD65R950CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.9A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 36.7W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
IPD65R950CFDATMA2 | Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPD65R950CFDATMA2 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK Power dissipation: 36.7W Gate charge: 14.1nC Technology: CoolMOS™ Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| IPD65R950CFDATMA2 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 650V 3.9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R950CFDATMA2 |
|
Виробник: Infineon Technologies
MOSFETs LOW POWER_LEGACY
MOSFETs LOW POWER_LEGACY
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R950CFDATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK
Power dissipation: 36.7W
Gate charge: 14.1nC
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK
Power dissipation: 36.7W
Gate charge: 14.1nC
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.