IPD70N12S311ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 70A TO252-31
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IPD70N12S311ATMA1 Infineon Technologies
Description: MOSFET N-CH 120V 70A TO252-31, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 4V @ 83µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD70N12S311ATMA1 за ціною від 58.85 грн до 212.97 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPD70N12S311ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 70A TO252-31Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4V @ 83µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 3531 шт: термін постачання 21-31 дні (днів) |
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IPD70N12S311ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(120V,300V) |
на замовлення 14440 шт: термін постачання 21-30 дні (днів) |
|
| IPD70N12S311ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 70A TO252-31
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 120V 70A TO252-31
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 3531 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 194.27 грн |
| 10+ | 121.10 грн |
| 100+ | 83.40 грн |
| 500+ | 64.32 грн |
| IPD70N12S311ATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs MOSFET_(120V,300V)
MOSFETs MOSFET_(120V,300V)
на замовлення 14440 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 212.97 грн |
| 10+ | 123.20 грн |
| 100+ | 78.24 грн |
| 500+ | 66.68 грн |
| 1000+ | 63.01 грн |
| 2500+ | 58.85 грн |



