| Кількість | Ціна |
|---|---|
| 4+ | 96.73 грн |
| 10+ | 85.73 грн |
| 100+ | 57.83 грн |
| 500+ | 47.80 грн |
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Технічний опис IPD70R600CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO252-3, Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 210µA, Power Dissipation (Max): 86W (Tc).
Інші пропозиції IPD70R600CEAUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPD70R600CEAUMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 700V 10.5A TO252-3Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 210µA Power Dissipation (Max): 86W (Tc) |
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