IPD80N04S306ATMA1 Infineon Technologies
на замовлення 4782 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 361+ | 84.46 грн |
| 500+ | 80.86 грн |
| 1000+ | 76.36 грн |
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Технічний опис IPD80N04S306ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 52µA, Supplier Device Package: PG-TO252-3-11, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPD80N04S306ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPD80N04S306ATMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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IPD80N04S306ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 52µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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IPD80N04S306ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 52µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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IPD80N04S306ATMA1 | Виробник : Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
товару немає в наявності |