IPD80P03P4L07ATMA2 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 36.89 грн |
| 5000+ | 33.11 грн |
| 7500+ | 32.74 грн |
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Технічний опис IPD80P03P4L07ATMA2 Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPD80P03P4L07ATMA2 за ціною від 31.51 грн до 119.23 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPD80P03P4L07ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 16152 шт: термін постачання 21-31 дні (днів) |
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IPD80P03P4L07ATMA2 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
на замовлення 21997 шт: термін постачання 21-30 дні (днів) |
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| IPD80P03P4L07ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 16152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 116.56 грн |
| 10+ | 72.84 грн |
| 100+ | 54.10 грн |
| 500+ | 40.40 грн |
| 1000+ | 37.61 грн |
| IPD80P03P4L07ATMA2 |
![]() |
Виробник: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
на замовлення 21997 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.23 грн |
| 10+ | 75.30 грн |
| 100+ | 48.07 грн |
| 500+ | 39.40 грн |
| 1000+ | 36.44 грн |
| 2500+ | 31.51 грн |


