| Кількість | Ціна |
|---|---|
| 4+ | 83.87 грн |
| 10+ | 58.20 грн |
| 100+ | 39.47 грн |
| 500+ | 31.58 грн |
| 1000+ | 28.26 грн |
| 2500+ | 23.61 грн |
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Технічний опис IPD80R1K2P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 80µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V.
Інші пропозиції IPD80R1K2P7ATMA1 за ціною від 29.38 грн до 107.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPD80R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement Version: ESD Gate charge: 11nC |
на замовлення 2495 шт: термін постачання 14-30 дні (днів) |
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IPD80R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 4.5A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 80µA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1784 шт: термін постачання 21-31 дні (днів) |
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| IPD80R1K2P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 11nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 11nC
на замовлення 2495 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 96.85 грн |
| 6+ | 75.68 грн |
| 10+ | 66.85 грн |
| 50+ | 47.09 грн |
| 100+ | 40.55 грн |
| 250+ | 35.04 грн |
| IPD80R1K2P7ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 800V 4.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 65.51 грн |
| 100+ | 43.68 грн |
| 500+ | 32.20 грн |
| 1000+ | 29.38 грн |