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Технічний опис IPD80R360P7 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 8.6A, Power dissipation: 84W, Case: PG-TO252-3, Gate-source voltage: ±20V, On-state resistance: 0.36Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 30nC, Version: ESD.
Інші пропозиції IPD80R360P7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPD80R360P7ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Gate charge: 30nC Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
| IPD80R360P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.