Технічний опис IPD90P04P4L04ATMA1 Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO252-3-313, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: P-Channel.
Інші пропозиції IPD90P04P4L04ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| IPD90P04P4L04ATMA1 | Infineon |
 MOSFET P-CH 40V 90A TO252-3 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IPD90P04P4L04ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 40V 90A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IPD90P04P4L04ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 40V 90A TO252-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
IPD90P04P4L04ATMA1 | Infineon Technologies |
MOSFETs P-Ch -40V -90A DPAK-2 OptiMOS-P2 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPD90P04P4L04ATMA1 |
|
Виробник: Infineon
MOSFET P-CH 40V 90A TO252-3 Транзистори
MOSFET P-CH 40V 90A TO252-3 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IPD90P04P4L04ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPD90P04P4L04ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Description: MOSFET P-CH 40V 90A TO252-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD90P04P4L04ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs P-Ch -40V -90A DPAK-2 OptiMOS-P2
MOSFETs P-Ch -40V -90A DPAK-2 OptiMOS-P2
товару немає в наявності
В кошику
од. на суму грн.