IPD95R750P7ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис IPD95R750P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 950V 9A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 220µA, Power Dissipation (Max): 73W (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IPD95R750P7ATMA1 за ціною від 49.36 грн до 160.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPD95R750P7ATMA1 | Infineon Technologies |
MOSFET LOW POWER_NEW |
на замовлення 9042 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
IPD95R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V |
на замовлення 3169 шт: термін постачання 21-31 дні (днів) |
|
| IPD95R750P7ATMA1 |
|
Виробник: Infineon Technologies
MOSFET LOW POWER_NEW
MOSFET LOW POWER_NEW
на замовлення 9042 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 135.68 грн |
| 10+ | 110.23 грн |
| 100+ | 76.83 грн |
| 250+ | 76.12 грн |
| 500+ | 64.21 грн |
| 1000+ | 55.05 грн |
| 2500+ | 51.59 грн |
| IPD95R750P7ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
на замовлення 3169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 160.17 грн |
| 10+ | 99.03 грн |
| 100+ | 67.48 грн |
| 500+ | 50.65 грн |
| 1000+ | 49.36 грн |