| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.97 грн |
| 10+ | 133.37 грн |
| 500+ | 111.84 грн |
| 1000+ | 98.72 грн |
| 1700+ | 98.03 грн |
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Технічний опис IPDD60R125G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10, Vgs(th) (Max) @ Id: 4V @ 320µA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-HDSOP-10-1.
Інші пропозиції IPDD60R125G7XTMA1 за ціною від 127.95 грн до 255.04 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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IPDD60R125G7XTMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 20A HDSOP-10Vgs(th) (Max) @ Id: 4V @ 320µA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 |
на замовлення 1085 шт: термін постачання 21-31 дні (днів) |
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IPDD60R125G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Type of transistor: N-MOSFET Technology: CoolMOS™ G7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 120W Case: PG-HDSOP-10-1 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 54A Gate charge: 27nC |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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| IPDD60R125G7XTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Vgs(th) (Max) @ Id: 4V @ 320µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Description: MOSFET N-CH 600V 20A HDSOP-10
Vgs(th) (Max) @ Id: 4V @ 320µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.19 грн |
| 10+ | 141.50 грн |
| 100+ | 127.95 грн |
| IPDD60R125G7XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 54A
Gate charge: 27nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 54A
Gate charge: 27nC
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.04 грн |
| 10+ | 222.70 грн |