IPDD60R190G7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 13A HDSOP-10, Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-HDSOP-10-1, Vgs(th) (Max) @ Id: 4V @ 210µA, Power Dissipation (Max): 76W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).