IPDQ60R010S7AXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
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Технічний опис IPDQ60R010S7AXTMA1 Infineon Technologies
Description: AUTOMOTIVE PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.08mA, Supplier Device Package: PG-HDSOP-22-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V, Qualification: AEC-Q101.
Інші пропозиції IPDQ60R010S7AXTMA1 за ціною від 771.80 грн до 1441.66 грн
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IPDQ60R010S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V Qualification: AEC-Q101 |
на замовлення 5124 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R010S7AXTMA1 | Infineon Technologies |
MOSFETs AUTOMOTIVE_COOLMOS |
на замовлення 918 шт: термін постачання 21-30 дні (днів) |
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| IPDQ60R010S7AXTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
на замовлення 5124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1364.55 грн |
| 10+ | 1049.78 грн |
| 25+ | 983.84 грн |
| 100+ | 855.28 грн |
| 250+ | 822.86 грн |
| IPDQ60R010S7AXTMA1 |
|
Виробник: Infineon Technologies
MOSFETs AUTOMOTIVE_COOLMOS
MOSFETs AUTOMOTIVE_COOLMOS
на замовлення 918 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1441.66 грн |
| 10+ | 1064.61 грн |
| 100+ | 824.96 грн |
| 500+ | 808.39 грн |
| 750+ | 771.80 грн |