IPDQ60R040S7AXTMA1 Infineon Technologies

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 790µA, Supplier Device Package: PG-HDSOP-22-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V, Qualification: AEC-Q101.