Технічний опис IPF010N06NF2SATMA1 Infineon Technologies
Description: TRENCH 40.
Інші пропозиції IPF010N06NF2SATMA1 за ціною від 159.84 грн до 349.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPF010N06NF2SATMA1 | Infineon Technologies |
 Description: TRENCH 40<-<100VInput Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7-U02 Vgs(th) (Max) @ Id: 3.3V @ 246µA Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 293A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 370 шт: термін постачання 21-31 дні (днів) |
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| IPF010N06NF2SATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 349.68 грн |
| 10+ | 224.03 грн |
| 100+ | 159.84 грн |