| Кількість | Ціна |
|---|---|
| 2+ | 296.85 грн |
| 10+ | 132.93 грн |
| 100+ | 95.15 грн |
| 500+ | 91.63 грн |
| 800+ | 90.92 грн |
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Технічний опис IPF012N06NF2SATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 282A; 250W; TO263-7, Case: TO263-7, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Mounting: SMD, Polarisation: unipolar, Gate charge: 155nC, On-state resistance: 1.2mΩ, Power dissipation: 250W, Drain current: 282A, Drain-source voltage: 60V.
Інші пропозиції IPF012N06NF2SATMA1 за ціною від 138.04 грн до 309.24 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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IPF012N06NF2SATMA1 | Infineon Technologies |
 Description: TRENCH 40<-<100VInput Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7-U02 Vgs(th) (Max) @ Id: 3.3V @ 186µA Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 282A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 245 шт: термін постачання 21-31 дні (днів) |
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| IPF012N06NF2SATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 282A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 282A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 309.24 грн |
| 10+ | 195.85 грн |
| 100+ | 138.04 грн |