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Технічний опис IPF013N04NF2S Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7, Type of transistor: N-MOSFET, Technology: StrongIRFET™ 2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 239A, Pulsed drain current: 956A, Power dissipation: 231W, Case: D2PAK-7, Gate-source voltage: ±20V, On-state resistance: 1.35mΩ, Mounting: SMD, Gate charge: 106nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції IPF013N04NF2S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IPF013N04NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7 Type of transistor: N-MOSFET Technology: StrongIRFET™ 2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 239A Pulsed drain current: 956A Power dissipation: 231W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IPF013N04NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 239A
Pulsed drain current: 956A
Power dissipation: 231W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 239A
Pulsed drain current: 956A
Power dissipation: 231W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.


