IPF014N08NF2SATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-14
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Технічний опис IPF014N08NF2SATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 282A; 300W; D2PAK-7, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 282A, Power dissipation: 300W, Case: D2PAK-7, On-state resistance: 1.4mΩ, Mounting: SMD, Gate charge: 170nC, Kind of channel: enhancement.
Інші пропозиції IPF014N08NF2SATMA1 за ціною від 149.42 грн до 393.06 грн
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IPF014N08NF2SATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO263-7 Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7-14 Vgs(th) (Max) @ Id: 3.8V @ 267µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 282A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V |
на замовлення 1599 шт: термін постачання 21-31 дні (днів) |
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IPF014N08NF2SATMA1 | Infineon Technologies |
MOSFETs IFX FET > 60-80V |
на замовлення 3466 шт: термін постачання 21-30 дні (днів) |
|
| IPF014N08NF2SATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-14
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Description: TRENCH 40<-<100V PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-14
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 317.17 грн |
| 10+ | 189.67 грн |
| 100+ | 172.11 грн |
| IPF014N08NF2SATMA1 |
|
Виробник: Infineon Technologies
MOSFETs IFX FET > 60-80V
MOSFETs IFX FET > 60-80V
на замовлення 3466 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 393.06 грн |
| 10+ | 271.53 грн |
| 100+ | 169.16 грн |
| 500+ | 160.70 грн |
| 800+ | 149.42 грн |