IPG20N04S408BATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 107.89 грн |
10+ | 86.76 грн |
100+ | 69.07 грн |
500+ | 54.85 грн |
1000+ | 46.54 грн |
2000+ | 44.21 грн |
Відгуки про товар
Написати відгук
Технічний опис IPG20N04S408BATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 65W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 30µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPG20N04S408BATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IPG20N04S408BATMA1 | Виробник : Infineon Technologies | IPG20N04S408BATMA1 |
товар відсутній |
||
IPG20N04S408BATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||
IPG20N04S408BATMA1 | Виробник : Infineon Technologies | MOSFET MOSFET_(20V 40V) |
товар відсутній |