Технічний опис IPG20N04S412ATMA1 Infineon
Description: MOSFET 2N-CH 40V 20A 8TDSON, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-4, Vgs(th) (Max) @ Id: 4V @ 15µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A, Drain to Source Voltage (Vdss): 40V, Power - Max: 41W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPG20N04S412ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IPG20N04S412ATMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 40V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
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IPG20N04S412ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-4 Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A Drain to Source Voltage (Vdss): 40V Power - Max: 41W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
 |
IPG20N04S412ATMA1 | Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
товару немає в наявності |
В кошику од. на суму грн. |
| IPG20N04S412ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| IPG20N04S412ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-4
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-4
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPG20N04S412ATMA1 |
|
Виробник: Infineon Technologies
MOSFET MOSFET_(20V 40V)
MOSFET MOSFET_(20V 40V)
товару немає в наявності
В кошику
од. на суму грн.