| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.25 грн |
| 10+ | 79.23 грн |
| 100+ | 45.36 грн |
| 500+ | 35.97 грн |
| 1000+ | 31.96 грн |
| 2500+ | 29.20 грн |
| 5000+ | 28.10 грн |
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Технічний опис IPG20N04S418AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-10, Vgs(th) (Max) @ Id: 4V @ 8µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 26W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPG20N04S418AATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPG20N04S418AATMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 40V 20A 8TDSONQualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-10 Vgs(th) (Max) @ Id: 4V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 26W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| IPG20N04S418AATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.