IPG20N04S4L08AATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 134.23 грн |
| 10+ | 82.32 грн |
| 100+ | 55.53 грн |
| 500+ | 41.33 грн |
| 1000+ | 38.53 грн |
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Технічний опис IPG20N04S4L08AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 54W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V, Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 22µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції IPG20N04S4L08AATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPG20N04S4L08AATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON T/R |
товару немає в наявності |
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IPG20N04S4L08AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 22µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
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IPG20N04S4L08AATMA1 | Виробник : Infineon Technologies |
MOSFETs N-CHANNEL_30/40V |
товару немає в наявності |