IPG20N04S4L11ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 30.75 грн |
| 10000+ | 28.35 грн |
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Технічний опис IPG20N04S4L11ATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 15µA, Supplier Device Package: PG-TDSON-8-4, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції IPG20N04S4L11ATMA1 за ціною від 30.69 грн до 121.67 грн
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IPG20N04S4L11ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 38095 шт: термін постачання 21-31 дні (днів) |
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IPG20N04S4L11ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R |
товару немає в наявності |
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| IPG20N04S4L11ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Mounting: SMD Drain-source voltage: 40V Drain current: 20A On-state resistance: 11.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 41W Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 80A Case: PG-TDSON-8-4 кількість в упаковці: 5000 шт |
товару немає в наявності |
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| IPG20N04S4L11ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Mounting: SMD Drain-source voltage: 40V Drain current: 20A On-state resistance: 11.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 41W Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 80A Case: PG-TDSON-8-4 |
товару немає в наявності |