IPG20N04S4L18AATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 23.15 грн |
Відгуки про товар
Написати відгук
Технічний опис IPG20N04S4L18AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 26W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V, Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 8µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції IPG20N04S4L18AATMA1 за ціною від 26.29 грн до 105.89 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPG20N04S4L18AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 9821 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
IPG20N04S4L18AATMA1 | Виробник : Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
товару немає в наявності |