IPG20N04S4L18AATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 26W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V, Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 8µA, Supplier Device Package: PG-TDSON-8-10, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.