IPG20N06S4L11ATMA1 Infineon Technologies

Description: MOSFET 2N-CH 60V 20A 8TDSON, Part Status: Active, Supplier Device Package: PG-TDSON-8-4, Vgs(th) (Max) @ Id: 2.2V @ 28µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A, Drain to Source Voltage (Vdss): 60V, Power - Max: 65W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.