IPG20N10S4L35AATMA1 Infineon Technologies

Description: MOSFET 2N-CH 100V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 43W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 16µA, Supplier Device Package: PG-TDSON-8-10, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.