IPI045N10N3 G Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 320.55 грн |
| 10+ | 207.21 грн |
| 100+ | 133.93 грн |
| 500+ | 112.53 грн |
| 1000+ | 104.24 грн |
| 2500+ | 98.03 грн |
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Технічний опис IPI045N10N3 G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 3.5V @ 150µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 137A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Packaging: Bulk.
Інші пропозиції IPI045N10N3 G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IPI045N10N3 G | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETDrain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 3.5V @ 150µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 137A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Packaging: Bulk |
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| IPI045N10N3 G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.