| Кількість | Ціна |
|---|---|
| 1+ | 365.10 грн |
| 10+ | 192.10 грн |
| 100+ | 150.13 грн |
| 500+ | 131.80 грн |
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Технічний опис IPI076N15N5AKSA1 Infineon Technologies
Description: INFINEON - IPI076N15N5AKSA1 - Leistungs-MOSFET, n-Kanal, 150 V, 112 A, 5900 µohm, TO-262, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 112A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.8V, euEccn: NLR, Verlustleistung: 214W, Bauform - Transistor: TO-262, Anzahl der Pins: 3Pin(s), Produktpalette: OptiMOS 5, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 5900µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції IPI076N15N5AKSA1 за ціною від 145.84 грн до 374.14 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPI076N15N5AKSA1 | Infineon Technologies |
 Description: MV POWER MOSInput Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4.6V @ 160µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 112A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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IPI076N15N5AKSA1 | INFINEON |
Description: INFINEON - IPI076N15N5AKSA1 - Leistungs-MOSFET, n-Kanal, 150 V, 112 A, 5900 µohm, TO-262, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 112A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 5900µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 983 шт: термін постачання 21-31 дні (днів) |
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| IPI076N15N5AKSA1 |
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Виробник: Infineon Technologies
Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 367.92 грн |
| 50+ | 185.74 грн |
| 100+ | 169.46 грн |
| IPI076N15N5AKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPI076N15N5AKSA1 - Leistungs-MOSFET, n-Kanal, 150 V, 112 A, 5900 µohm, TO-262, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 112A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 214W
Bauform - Transistor: TO-262
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 5900µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IPI076N15N5AKSA1 - Leistungs-MOSFET, n-Kanal, 150 V, 112 A, 5900 µohm, TO-262, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 112A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 214W
Bauform - Transistor: TO-262
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 5900µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 374.14 грн |
| 10+ | 200.64 грн |
| 100+ | 182.55 грн |
| 500+ | 145.84 грн |