IPI100N06S3L-03 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 55V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2442 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 197+ | 112.04 грн |
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Технічний опис IPI100N06S3L-03 Infineon Technologies
Description: MOSFET N-CH 55V 100A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 230µA, Supplier Device Package: PG-TO262-3, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPI100N06S3L-03
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPI100N06S3L-03 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-262 |
товару немає в наявності |
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IPI100N06S3L-03 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 230µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |