IPI120N06S402AKSA2 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 154+ | 148.35 грн |
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Технічний опис IPI120N06S402AKSA2 Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TO262-3-1, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPI120N06S402AKSA2 за ціною від 127.70 грн до 288.55 грн
| Фото | Назва | Виробник | Інформація |
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IPI120N06S402AKSA2 | Виробник : Infineon Technologies |
MOSFET MOSFET |
на замовлення 423 шт: термін постачання 21-30 дні (днів) |
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IPI120N06S402AKSA2 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-262 Tube |
товару немає в наявності |
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IPI120N06S402AKSA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |