IPI147N12N3G Infineon Technologies

Description: IPI147N12 - 12V-300V N-CHANNEL P, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 4V @ 61µA, Power Dissipation (Max): 107W (Tc), Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk.