IPI22N03S4L-15 Infineon Technologies
на замовлення 286 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IPI22N03S4L-15 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 10µA, Supplier Device Package: PG-TO262-3-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V.
Інші пропозиції IPI22N03S4L-15
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPI22N03S4L-15 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 30V 22A Automotive 3-Pin(3+Tab) TO-262 Tube |
товар відсутній |
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IPI22N03S4L-15 | Виробник : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
товар відсутній |