IPI320N20N3GAKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 306 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 161+ | 128.09 грн |
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Технічний опис IPI320N20N3GAKSA1 Infineon Technologies
Description: MOSFET N-CH 200V 34A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO262-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V.
Інші пропозиції IPI320N20N3GAKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPI320N20N3GAKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 200V 34A 3-Pin(3+Tab) TO-262 Tube |
товар відсутній |
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IPI320N20N3GAKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3 Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 34A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Case: PG-TO262-3 On-state resistance: 32mΩ Gate-source voltage: ±20V Mounting: THT кількість в упаковці: 1 шт |
товар відсутній |
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IPI320N20N3GAKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 200V 34A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
товар відсутній |
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IPI320N20N3GAKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3 Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 34A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Case: PG-TO262-3 On-state resistance: 32mΩ Gate-source voltage: ±20V Mounting: THT |
товар відсутній |