IPI50R250CPXKSA1

IPI50R250CPXKSA1 Infineon Technologies


IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 1485 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
270+74.02 грн
Мінімальне замовлення: 270
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Технічний опис IPI50R250CPXKSA1 Infineon Technologies

Description: MOSFET N-CH 500V 13A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 520µA, Supplier Device Package: PG-TO262-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V.

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IPI50R250CPXKSA1 IPI50R250CPXKSA1 Виробник : Infineon Technologies ipi50r250cp_rev2.0.pdf Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-262 Tube
товар відсутній
IPI50R250CPXKSA1 IPI50R250CPXKSA1 Виробник : INFINEON TECHNOLOGIES IPI50R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
IPI50R250CPXKSA1 IPI50R250CPXKSA1 Виробник : Infineon Technologies IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
товар відсутній
IPI50R250CPXKSA1 IPI50R250CPXKSA1 Виробник : INFINEON TECHNOLOGIES IPI50R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
товар відсутній