IPI60R099CPXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 584.81 грн |
| 10+ | 483.12 грн |
| 100+ | 402.62 грн |
| 500+ | 333.40 грн |
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Технічний опис IPI60R099CPXKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 31A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Power Dissipation (Max): 255W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Інші пропозиції IPI60R099CPXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPI60R099CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO262-3-1 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| IPI60R099CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.