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IPI60R299CPXKSA1

IPI60R299CPXKSA1 Infineon Technologies

IPI60R299CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e79d249d3
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
231+93.23 грн
Мінімальне замовлення: 231 шт
В кошику  од. на суму  грн.
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Технічний опис IPI60R299CPXKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 11A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 3.5V @ 440µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.

Інші пропозиції IPI60R299CPXKSA1

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IPI60R299CPXKSA1 IPI60R299CPXKSA1 Infineon Technologies IPI60R299CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e79d249d3 Description: MOSFET N-CH 600V 11A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IPI60R299CPXKSA1 IPI60R299CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e79d249d3
IPI60R299CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.